EBAC/RCI acquisition

The lowest noise Electron Beam Absorbed Current(EBAC) and Resistive Contrast Imaging(RCI) system

Benefits

Characterize interconnects with the highest resolution

• Reveal electrical integrity of nets with sub-micron resolution
• Diagnose contamination, metal patterning defects, resistive interconnectors
• Directly isolate defects to exact layer and die location

Find exact location of any open, resistive or shorting defect

• Localize metal line cuts caused by cracking, corrosion, electro-migration or foreign particles
• Identify resistive opens caused by interface contamination at vias
• Pinpoint location for direct TEM lamella FIB preparation

Verify device operation models with built-in biasing for voltage contrast

• Image bias/voltage contrast in delayered devices
• Monitor operation of devices under bias
• Compare imaged behaviour with device design

Localize defects in thin dielectric layers

• Visualize weaknesses in GOX or COX before breakdown
• Pinpoint oxide shorts caused by ESD or EOS with sub-micron resolution
• Preserve the original defect with nW power dissipation during analysis

Access failures invisible in voltage contrast

• Find low resistances that allow charge tunnelling through interconnects
• Investigate structures in contact with the silicon substrate
• Characterize large metal structures